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| Semiconductor SB3317-G / SB3317-G(B) High Brightness LED Lamp Features * Colorless transparency lens type * 3mm(T-1) all plastic mold type * Super luminosity Outline Dimensions STRAIGHT TYPE 3.00.2 unit : STOPPER TYPE 3.00.2 mm 5.30.2 2.90.2 5.30.2 2.90.2 5.20.5 0.4 23.0MIN 0.4 23.0MIN 1.0MIN 2.54 NOM 2.54 NOM 1.0MIN 12 3.80.2 3.60.2 12 3.80.2 3.60.2 PIN Connections 1.Anode 2.Cathode KLB-2002-001 1 SB3317-G / SB3317-G(B) Absolute maximum ratings Characteristic Power Dissipation Forward Current * Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature * Soldering Temperature 2 1 Symbol PD IF IFP VR Topr Tstg Tsol Ratings 80 20 50 4 -2585 -30100 260 for 5 seconds Unit mW mA mA V *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Forward Voltage * Luminous Intensity Peak Wavelength Spectrum Bandwidth Reverse Current *3Half angle 4 Symbol VF IV P IR 1/2 Test Condition IF= 20mA IF= 20mA IF= 20mA IF= 20mA VR=4V IF= 20mA Min. 520 - Typ. 3.4 1000 468 26 22 Max. 4.0 1760 10 - Unit V mcd nm nm uA deg *3. 1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity *4. Luminous Intensity Maximum tolerance for each Grade Classification limit is 18% *4. Luminous Intensity classification P 520 ~ 780 Q 780 ~ 1170 R 1170 ~ 1760 KLB-2002-001 2 SB3317-G / SB3317-G(B) Characteristic Diagrams Fig. 1 IF - VF Fig. 2 IV - IF Forward Voltage VF [V] Luminous Intensity Iv [mcd] Forward Current IF [mA] Forward Current IF [mA] Fig. 3 IF - Ta Fig.4 Spectrum Distribution Current IF [mA] Forward Relative Intensity [%] Ambient Temperature Ta [] Wavelength [nm] Fig. 5 Radiation Diagram Relative Luminous Intensity Iv [%] KLB-2002-001 3 |
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